Title :
High-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs
Author :
Moon, Seong Min ; Chae, Seung Wan ; Kwak, Joon Seop
Author_Institution :
Dept. of Mater. Sci. & Metall. Eng., Sunchon Nat. Univ., Chonnam, South Korea
Abstract :
In this study, we have investigated the high-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs. For this purpose, we fabricated large size blue InGaN/GaN LED chips (1mm×1mm) by using standard LED fabrication processes, where the ITO and Cr/Au served as p-type ohmic contact and n-ohmic contact layer, respectively.
Keywords :
III-V semiconductors; ageing; gallium compounds; indium compounds; light emitting diodes; ohmic contacts; reliability; wide band gap semiconductors; InGaN; electrical stress; electro-optical degradation; light emitting diodes; ohmic contacts; thermal stress; Aging; Current measurement; Electrical resistance measurement; Gallium nitride; Leakage current; Light emitting diodes; Power measurement; Temperature; Thermal degradation; Thermal stresses;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354857
