A consistent explanation of the role of the SiN composition on the program/retention characteristics of MANOS and NROM like memories

Author

Vianello, E. ; Nowak, E. ; Perniola, L. ; Driuss, F. ; Blaise, P. ; Molas, G. ; De Salvo, B. ; Selmi, L.

Author_Institution

DIEGM, Univ. of Udine, Udine, Italy

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

4

Abstract

In this work, we show that a detailed atomistic model of SiN defects provides a consistent explanation of the program/erase/retention characteristics of both NROM and MANOS charge-trap cells. Our analysis of devices with SiN layers of different stoichiometry is also consistent with original KFM measurements of trapped charge drift in SiN layers.

Keywords

random-access storage; read-only storage; semiconductor device reliability; Kelvin probe configuration; MANOS charge-trap cells; MANOS like memories; NROM like memories; SiN; SiN defect atomistic model; charge-trap nonvolatile memories; program-erase-retention characteristics; stoichiometry; trapped charge drift KFM measurements; Atomic measurements; Channel hot electron injection; Charge carrier processes; Current measurement; Dielectric losses; Electric variables; Electron traps; Kelvin; Performance analysis; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488384

Filename

5488384