Title :
A consistent explanation of the role of the SiN composition on the program/retention characteristics of MANOS and NROM like memories
Author :
Vianello, E. ; Nowak, E. ; Perniola, L. ; Driuss, F. ; Blaise, P. ; Molas, G. ; De Salvo, B. ; Selmi, L.
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
Abstract :
In this work, we show that a detailed atomistic model of SiN defects provides a consistent explanation of the program/erase/retention characteristics of both NROM and MANOS charge-trap cells. Our analysis of devices with SiN layers of different stoichiometry is also consistent with original KFM measurements of trapped charge drift in SiN layers.
Keywords :
random-access storage; read-only storage; semiconductor device reliability; Kelvin probe configuration; MANOS charge-trap cells; MANOS like memories; NROM like memories; SiN; SiN defect atomistic model; charge-trap nonvolatile memories; program-erase-retention characteristics; stoichiometry; trapped charge drift KFM measurements; Atomic measurements; Channel hot electron injection; Charge carrier processes; Current measurement; Dielectric losses; Electric variables; Electron traps; Kelvin; Performance analysis; Silicon compounds;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488384
