DocumentCode
2692167
Title
Metal source/drain inversion-mode InP MOSFETs
Author
Kim, S.H. ; Nakagawa, S. ; Haimoto, T. ; Nakane, R. ; Takenaka, M. ; Takagi, S.
Author_Institution
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
fYear
2009
fDate
22-24 June 2009
Firstpage
115
Lastpage
116
Abstract
In this study, we examine metal materials suitable for InP metal S/D n-MOSFETs through electrical characteristics of metal/InP diodes. As a result of the diode characteristics, we demonstrate successful fabrication and operation of metal S/D MOSFETs on InP substrates, for the first time.
Keywords
III-V semiconductors; MOSFET; indium compounds; rapid thermal annealing; InP; MOSFET; diode characteristics; metal source drain inversion-mode; mobility enhancement; rapid thermal annealing; III-V semiconductor materials; Indium phosphide; Inorganic materials; Lithography; MOSFET circuits; Schottky diodes; Semiconductor diodes; Sputtering; Substrates; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354866
Filename
5354866
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