Investigation of scattering mechanisms in HfO2 gated Hall structures with In0.77Ga0.23As quantum well channel

Author

Oktyabrsky, S. ; Nagaiah, P. ; Tokranov, V. ; Kambhampati, R. ; Yakimov, M. ; Tsai, W. ; Koveshnikov, S.

Author_Institution

Univ. at Albany - SUNY, Albany, NY, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

119

Lastpage

120

Abstract

In this work we investigate the major scattering mechanisms leading to degradation of mobility in HfO₂-gated, modulation doped, strained In_0.53Ga_0.47As/In_0.77Ga_0.23As QW structures were grown by molecular beam epitaxy on semi-insulating InP substrates. By varying In_0.53Ga_0.47As/InAlAs barrier and HfO₂ thickness along with controlling interface state density and using temperature dependent Hall mobility measurements we have de-convoluted the contribution of various scattering mechanisms to channel mobility degradation.

Keywords

Hall mobility; III-V semiconductors; aluminium compounds; dielectric materials; gallium arsenide; hafnium compounds; indium compounds; interface states; molecular beam epitaxial growth; semiconductor quantum wells; semiconductor-insulator boundaries; HfO₂-In_0.53Ga_0.47As-In_0.77Ga_0.23As-InP; In_0.53Ga_0.47As-InAlAs-HfO₂; channel mobility degradation; high-k oxide gated Hall structures; high-k oxide-gated quantum well structure; interface state density; modulation doped quantum well structure; molecular beam epitaxy; phonon scattering; quantum well channel; scattering mechanisms; semiinsulating InP substrates; strained quantum well structure; temperature dependent Hall mobility; Degradation; Epitaxial layers; Hafnium oxide; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Scattering; Substrates; Temperature control; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354868

Filename

5354868