Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights

This paper presents the synthesis of vertically aligned ZnO NWs on a p-type gallium nitride (GaN) layer by using a hydrothermal method to form ZnO NW/p-GaN nanoheterojunction (NHJ) arrays for optoelectronic devices applications. The optoelectronic properties of the ZnO NWs/p-GaN NHJs with good UV sensitivities and superior PV performances under an UV (366 nm) light and a simulated AM1.5G solar illumination were reported. Effects of the length of ZnO NWs on the PV performance of the ZnO NWs/p-GaN NHJs are also investigated and discussed.