Title :
Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration
Author :
Hsu, Wen I. ; Wang, Shui Jinn ; Tsai, Wei Chih ; Tseng, Chih Ren ; Hsu, Wen Chu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This study demonstrates the synthesis of lateral zinc oxide nanowires (ZnO NWs) with an emitter-to-emitter configuration on a simple Pt/AZO bi-layer structure by hydrothermal synthesis (HTS) method and presents their superior electron field emission (FE) characteristics and pressure/UV light (254, 366 nm) sensing properties. The highly sensitive response to both pressure and UV illumination is attributed to the use of an emitter-to-emitter configuration with short interelectrode spacing as well as the good crystal quality of the lateral ZnO NWs. Experimental results presented in this work indicate that the lateral ZnO NWs can be a potential candidate for devices applications of gas, pressure, and UV light sensors.
Keywords :
electron field emission; nanowires; ultraviolet sources; zinc compounds; UV illumination; UV light sensitive electron field emission properties; UV light sensors; ZnO; bi-layer structure; crystal quality; emitter-to-emitter configuration; hydrothermal synthesis method; interelectrode spacing; nanowires; Chemical sensors; Electrodes; Electron emission; High temperature superconductors; Iron; Lighting; Low voltage; Nanowires; Thermal resistance; Zinc oxide;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354871
