DocumentCode
2692282
Title
Phase Change Memory development trends
Author
Bez, R. ; Bossi, S. ; Gleixner, B. ; Pellizzer, F. ; Pirovano, A. ; Servalli, G. ; Tosi, M.
Author_Institution
R&D Technol. Dev., Numonyx, Agrate Brianza, Italy
fYear
2010
fDate
16-19 May 2010
Firstpage
1
Lastpage
4
Abstract
At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade. As the end of this decade is approaching it can be noted that only one of the proposed technologies is demonstrating the capability to enter the broad NVM market and to be a mainstream memory for the next decade: the Phase Change Memory technology. PCM provides a new set of features interesting for novel applications, combining features of NVM and DRAM and being at the same time a sustaining and a disruptive technology.
Keywords
DRAM chips; flash memories; phase change memories; DRAM; NVM technology; PCM technology; disruptive technology; flash application; nonvolatile memory; phase change memory; Application software; CMOS technology; Diodes; Material storage; Nonvolatile memory; P-n junctions; Phase change materials; Phase change memory; Random access memory; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2010 IEEE International
Conference_Location
Seoul
Print_ISBN
978-1-4244-6719-8
Electronic_ISBN
978-1-4244-7668-8
Type
conf
DOI
10.1109/IMW.2010.5488398
Filename
5488398
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