• DocumentCode
    2692282
  • Title

    Phase Change Memory development trends

  • Author

    Bez, R. ; Bossi, S. ; Gleixner, B. ; Pellizzer, F. ; Pirovano, A. ; Servalli, G. ; Tosi, M.

  • Author_Institution
    R&D Technol. Dev., Numonyx, Agrate Brianza, Italy
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade. As the end of this decade is approaching it can be noted that only one of the proposed technologies is demonstrating the capability to enter the broad NVM market and to be a mainstream memory for the next decade: the Phase Change Memory technology. PCM provides a new set of features interesting for novel applications, combining features of NVM and DRAM and being at the same time a sustaining and a disruptive technology.
  • Keywords
    DRAM chips; flash memories; phase change memories; DRAM; NVM technology; PCM technology; disruptive technology; flash application; nonvolatile memory; phase change memory; Application software; CMOS technology; Diodes; Material storage; Nonvolatile memory; P-n junctions; Phase change materials; Phase change memory; Random access memory; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2010 IEEE International
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-6719-8
  • Electronic_ISBN
    978-1-4244-7668-8
  • Type

    conf

  • DOI
    10.1109/IMW.2010.5488398
  • Filename
    5488398