High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films

Author

Cao, Helin ; Yu, Qingkai ; Childres, Isaac ; Pei, Steven S. ; Chen, Yong P.

Author_Institution

Dept. of Phys., Purdue Univ., West Lafayette, IN, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

133

Lastpage

134

Abstract

Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transistors (GFET) made from exfoliated (from bulk graphite) or epitaxially-grown (by surface decomposition of SiC) graphene layers can show electron and hole mobilities approaching 104 cm2/Vs or higher.

Keywords

chemical vapour deposition; electron mobility; field effect transistors; hole mobility; thin films; back-gated graphene field effect transistor; carbon-based transistor; electron mobility; front-gated graphene field effect transistor; high mobility ambipolar field effect transistor; hole mobility; large-scale CVD graphitic thin film; ultrathin graphitic film; Electron optics; Etching; FETs; Large-scale systems; Nanotechnology; Optical films; Optical microscopy; Physics computing; Semiconductor films; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354876

Filename

5354876