DocumentCode :
2692327
Title :
Investigation of thermally robust single-component resistive switching organic memory cell
Author :
Yongbian Kuang ; Huang, Ru ; Wu, Dake ; Tang, Yu ; Yu, Zhe ; Ma, Ying ; Zhang, Lijie ; Tang, Poren ; Gao, Dejin ; Wen, Yongqiang ; Song, Yalin
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear :
2009
fDate :
22-24 June 2009
Firstpage :
137
Lastpage :
138
Abstract :
A novel organic memory device based on titanyl phthalocyanine (TiOPc) thin film sandwiched between Aluminum and indium tin oxide electrodes was reported. With a single-component organic material, the device can achieve good performance, such as a high on/off current ratio of 104, a large 4 V read voltage window, and good retention (14,000 s at 1 V stress). The organic memory cell can maintain bistable performance up to 525 K due to the thermal robustness of Ti OPc, indicating the potential for hybrid integration with CMOS technology. The possible switching mechanism is proposed and well fitted with experimental data. The results show that the interface is significant for the reversible switching phenomenon. Trap-filling space charge limited conduction (S CLC) with TiOPc charge confinement and electrochemical reaction at the interface inducing lower electron affinity can elucidate the switching behavior of the TiOPc memory cell.
Keywords :
aluminium; indium compounds; organic semiconductors; random-access storage; semiconductor-metal boundaries; CMOS technology; aluminum electrodes; bistability; charge confinement; electrochemical reaction; electron affinity; indium tin oxide electrodes; organic memory device; reversible switching phenomenon; single-component resistive switching organic memory cell; switching mechanism; temperature 525 K; thin film; titanyl phthalocyanine; trap-filling space charge limited conduction; Aluminum; CMOS technology; Electrodes; Indium tin oxide; Organic materials; Robustness; Thermal resistance; Thermal stresses; Thin film devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
Type :
conf
DOI :
10.1109/DRC.2009.5354878
Filename :
5354878
Link To Document :
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