• DocumentCode
    2692327
  • Title

    Investigation of thermally robust single-component resistive switching organic memory cell

  • Author

    Yongbian Kuang ; Huang, Ru ; Wu, Dake ; Tang, Yu ; Yu, Zhe ; Ma, Ying ; Zhang, Lijie ; Tang, Poren ; Gao, Dejin ; Wen, Yongqiang ; Song, Yalin

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    A novel organic memory device based on titanyl phthalocyanine (TiOPc) thin film sandwiched between Aluminum and indium tin oxide electrodes was reported. With a single-component organic material, the device can achieve good performance, such as a high on/off current ratio of 104, a large 4 V read voltage window, and good retention (14,000 s at 1 V stress). The organic memory cell can maintain bistable performance up to 525 K due to the thermal robustness of Ti OPc, indicating the potential for hybrid integration with CMOS technology. The possible switching mechanism is proposed and well fitted with experimental data. The results show that the interface is significant for the reversible switching phenomenon. Trap-filling space charge limited conduction (S CLC) with TiOPc charge confinement and electrochemical reaction at the interface inducing lower electron affinity can elucidate the switching behavior of the TiOPc memory cell.
  • Keywords
    aluminium; indium compounds; organic semiconductors; random-access storage; semiconductor-metal boundaries; CMOS technology; aluminum electrodes; bistability; charge confinement; electrochemical reaction; electron affinity; indium tin oxide electrodes; organic memory device; reversible switching phenomenon; single-component resistive switching organic memory cell; switching mechanism; temperature 525 K; thin film; titanyl phthalocyanine; trap-filling space charge limited conduction; Aluminum; CMOS technology; Electrodes; Indium tin oxide; Organic materials; Robustness; Thermal resistance; Thermal stresses; Thin film devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354878
  • Filename
    5354878