Design of TAS-MRAM prototype for NV embedded memory applications

Author

Chaudhuri, Sumanta ; Zhao, Weisheng ; Klein, Jacques-Olivier ; Chappert, Claude ; Mazoyer, Pascale

Author_Institution

IEF, CNRS, Orsay, France

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.

Keywords

CMOS memory circuits; MRAM devices; amplifiers; low-power electronics; CMOS technology; NV embedded memory applications; TAS-MRAM prototype; low power memory programming; pre-charge sense amplifiers; thermally assisted switching; CMOS technology; High power amplifiers; Inverters; Magnetic fields; Magnetic tunneling; Operational amplifiers; Prototypes; Semiconductor device modeling; Temperature; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488401

Filename

5488401