DocumentCode
2692366
Title
A novel fatigue-insensitive self-referenced scheme for 1T1C FRAM
Author
Jia, Ze ; Zhang, Gong ; Zhang, Ming-Ming ; Ren, Tian-Ling ; Chen, Hong-Yi
Author_Institution
Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear
2010
fDate
16-19 May 2010
Firstpage
1
Lastpage
2
Abstract
A novel self-referenced scheme without reference cell is proposed for 1T1C FRAM, which is a new solution to the access scheme for high density FRAM. It is insensitive and robust to fatigue of the FRAM cells and can overcome the challenges on reference signal design for 1T1C FRAM. Furthermore, the proposed scheme can decrease the power consumption and the die size of 1T1C FRAM, compared with conventional schemes.
Keywords
ferroelectric storage; random-access storage; 1T1C FRAM; fatigue-insensitive self-referenced scheme; ferroelectric random access memory; Circuits; Energy consumption; Fatigue; Ferroelectric films; Inverters; Nonvolatile memory; Random access memory; Signal design; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2010 IEEE International
Conference_Location
Seoul
Print_ISBN
978-1-4244-6719-8
Electronic_ISBN
978-1-4244-7668-8
Type
conf
DOI
10.1109/IMW.2010.5488402
Filename
5488402
Link To Document