DocumentCode
2692424
Title
Device scaling for 15 nm node and beyond
Author
Shahidi, Ghavam G.
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
247
Lastpage
250
Abstract
In summary, as we move it 15 nm and beyond, it is critical that the device structure fit in ever smaller footprint. It seems that Si devices can fulfill this key requirement: moving from thick body devices to thin body and ultimately to Si nano-wires, in order to enable small gate length devices. This is the good news. Better news could be if we are able to find a device that can do better than Silicon MOSFET.
Keywords
MOSFET; nanowires; silicon; Si devices; Si nanowires; device scaling; silicon MOSFET; thick body devices; thin body devices; BiCMOS integrated circuits; CMOS technology; Cooling; Costs; Frequency; Moore´s Law; Performance gain; Random access memory; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354883
Filename
5354883
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