DocumentCode
2692427
Title
Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor
Author
Oh, Byoungchan ; Cho, Heung-Jae ; Kim, Heesang ; Shin, Hyungcheol
Author_Institution
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
fYear
2010
fDate
16-19 May 2010
Firstpage
1
Lastpage
2
Abstract
Multi level RTNs have been measured in GIDL current of DRAM cell transistor. Three-level RTN which has not been reported in GIDL current was observed. We found that this RTN has unique characteristics which could be distinguished from two-level RTN by single trap and four-level RTN due to two traps. Also, we discussed bias dependency of time constants of the three-level RTN.
Keywords
DRAM chips; circuit noise; telegraphy; GIDL current; random telegraph noise; saddle-fin type DRAM cell transistor; Current measurement; Electric variables measurement; Electron traps; Leakage current; Noise level; Noise measurement; Random access memory; Semiconductor device noise; Telegraphy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2010 IEEE International
Conference_Location
Seoul
Print_ISBN
978-1-4244-6719-8
Electronic_ISBN
978-1-4244-7668-8
Type
conf
DOI
10.1109/IMW.2010.5488406
Filename
5488406
Link To Document