Title :
IGBTs designed for automotive ignition systems
Author :
Mamileti, Lakshmikant ; Robb, Stephen P. ; Shen, Z. John ; Taomoto, Aileen A.
Author_Institution :
Commun. Power & Signal Technol. Group, Motorola Inc., Phoenix, AZ, USA
Abstract :
In recent years the IGBT has become the device of choice for driving ignition coils. The IGBT is a high-voltage, high-current device that is well suited to ignition applications which require 400 volts and 10 amps. Polysilicon diodes are integrated with the IGBT to form a high-voltage, gate-collector clamp for switching an inductive load. Second generation ignition IGBTs have been designed that meet ignition system requirements while using 40% less silicon than the previous generation
Keywords :
automotive electronics; bipolar transistor switches; coils; electric ignition; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; switching circuits; 10 A; 400 V; HV gate-collector clamp; applications; automotive ignition systems; ignition coils; inductive load switching; polysilicon diodes; power IGBTs; Automotive engineering; Buffer layers; Clamps; Coils; Fires; Ignition; Insulated gate bipolar transistors; Low voltage; Plugs; Sparks;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548841
