IGBTs designed for automotive ignition systems

Author

Mamileti, Lakshmikant ; Robb, Stephen P. ; Shen, Z. John ; Taomoto, Aileen A.

Author_Institution

Commun. Power & Signal Technol. Group, Motorola Inc., Phoenix, AZ, USA

Volume

2

fYear

1996

fDate

23-27 Jun 1996

Firstpage

1907

Abstract

In recent years the IGBT has become the device of choice for driving ignition coils. The IGBT is a high-voltage, high-current device that is well suited to ignition applications which require 400 volts and 10 amps. Polysilicon diodes are integrated with the IGBT to form a high-voltage, gate-collector clamp for switching an inductive load. Second generation ignition IGBTs have been designed that meet ignition system requirements while using 40% less silicon than the previous generation

Keywords

automotive electronics; bipolar transistor switches; coils; electric ignition; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; switching circuits; 10 A; 400 V; HV gate-collector clamp; applications; automotive ignition systems; ignition coils; inductive load switching; polysilicon diodes; power IGBTs; Automotive engineering; Buffer layers; Clamps; Coils; Fires; Ignition; Insulated gate bipolar transistors; Low voltage; Plugs; Sparks;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE

Conference_Location

Baveno

ISSN

0275-9306

Print_ISBN

0-7803-3500-7

Type

conf

DOI

10.1109/PESC.1996.548841

Filename

548841