• DocumentCode
    2692506
  • Title

    Novel 3-D stacked NAND flash string without body cross-talk effect

  • Author

    Jeong, Min-Kyu ; Lee, Joo-Wan ; Cho, Ilwhan ; Park, Byung-Gook ; Shin, Hyung-Cheol ; Lee, Jong-Ho

  • Author_Institution
    Sch. of EECS, Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have investigated ID-VGS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.
  • Keywords
    NAND circuits; flash memories; NAND flash memory; NAND flash string; body cross-talk effect; common gate structure; shield layer; Character generation; Doping; Etching; Flash memory; Germanium silicon alloys; Immune system; Silicon germanium; Temperature; Thermal stresses; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2010 IEEE International
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-6719-8
  • Electronic_ISBN
    978-1-4244-7668-8
  • Type

    conf

  • DOI
    10.1109/IMW.2010.5488410
  • Filename
    5488410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2692506