Title :
Above 500 °C operation of InAlN/GaN HEMTs
Author :
Maier, D. ; Alomari, M. ; Grandjean, N. ; Carlin, J.-F. ; Diforte-Poisson, M.-A. ; Dua, C. ; Chuvilin, A. ; Troadec, David ; Gaquière, Christophe ; Kaiser, U. ; Delage, S. ; Kohn, E.
Author_Institution :
Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany
Abstract :
Due to their ceramic-like thermal/chemical stability GaN-based HEMTs are expected to be of high robustness and may also be a prime candidate for reliable high temperature operation. In gas sensing AlGaN/GaN heterostructures have been investigated up to 800¿C. In a simple proof-of-concept experiment InAlN/GaN HEMTs have been operated at 1000¿C for a short period of time in vacuum. However in respect to continuous operation most tests have been limited to a temperature range below 500¿C. Here a continuous test is described operating devices under 1 MHz large signal conditions for 250 hrs at a given temperature increased in steps of 100¿C (in vacuum), concentrating on the temperature range above 500¿C, until failure.
Keywords :
aluminium compounds; ceramics; gallium compounds; high electron mobility transistors; indium compounds; thermal stability; wide band gap semiconductors; HEMT; InAlN-GaN; ceramic-like thermal-chemical stability; temperature 1000 degC; temperature 500 degC; time 250 hour; Aluminum gallium nitride; Chemicals; Gallium nitride; HEMTs; MODFETs; Robust stability; Temperature distribution; Temperature sensors; Testing; Thermal stability;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354902
