Electric control of magnetization via control of carriers´ spectrum anisotropy

Author

Chernyshov, A. ; Overby, M. ; Rokhinson, L.P. ; Geller, Y. Lyanda ; Liu, X. ; Furdyna, J.K.

Author_Institution

Dept. of Phys., Purdue Univ., West Lafayette, IN, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

37

Lastpage

38

Abstract

In this paper, we demonstrated two types of magnetization control: in device A uniaxial strain is applied by a strain-coupled piezoelectric material and magnetization direction is controlled by electrostatic voltages; in device B magnetization is controlled by spin-orbit effective field generated intrinsically by non-polarized dc current. In both cases we report reversible manipulation of magnetization direction, which demonstrates a direct implementation of a nonvolatile memory cell.

Keywords

III-V semiconductors; gallium compounds; magnetic anisotropy; magnetic storage; magnetisation; manganese compounds; piezoelectric materials; random-access storage; spin-orbit interactions; (GaMn)As; carrier spectrum anisotropy; electric control; electrostatic voltage; magnetization; nonpolarized dc current; nonvolatile memory cell; spin-orbit effective field; strain-coupled piezoelectric material; Anisotropic magnetoresistance; Magnetization;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354908

Filename

5354908