Bias and gate control of graphene spin valves

Author

Han, Wei ; Wang, W.H. ; Pi, K. ; McCreary, K.M. ; Bao, W. ; Li, Yan ; Lau, C.N. ; Kawakami, R.K.

Author_Institution

Dept. of Phys. & Astron., Univ. of California, Riverside, CA, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

39

Lastpage

40

Abstract

In this paper we are fabricating and utilizing the bias current and gate voltage to control the room temperature (RT) single layer graphene (SLG) spin valves. The SLG spin valves are fabricated by electron-beam lithography with transparent SLG/Co contact junctions. The properties of SLG spin valves: non-local MR depending on the gate voltage, robustness on the electron side and variation on the hole side as a function of bias, make the graphene spin valves as one of the most promising RT multifunctional spintronic devices for the future.

Keywords

cobalt; electron beam lithography; graphene; interface magnetism; magnetoelectronics; magnetoresistance; spin valves; C-Co; bias current control; contact junction; electron-beam lithography; gate voltage control; magnetoresistance; multifunctional spintronic device; robustness; room temperature single layer graphene; spin valve; temperature 293 K to 298 K; Astronomy; Charge carrier processes; Conductivity; Electrodes; Lithography; Magnetoresistance; Physics; Spin valves; Temperature control; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354909

Filename

5354909