DocumentCode
2692926
Title
Spin polarized lasers
Author
Bhattacharya, Pallab ; Basu, D. ; Saha, D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
41
Lastpage
44
Abstract
The ability to dynamically switch between orthogonal polarization states in spin-polarized semiconductor lasers with the bias current, which are otherwise difficult to predict, stabilize, or control, offers a novel and elegant technique for secure communication in a lightwave network. Other envisaged applications include reconfigurable optical interconnects, study of vitamins and asymmetric photochemical synthesis. Spin-polarized lasers also promise reduced threshold current [2], enhanced emission intensity and optical communication with enhanced bandwidth. For practical purposes the lasers have to be electrically injected and operate at high temperatures. To this end we have investigated the properties of quantum well and quantum dot spin vertical cavity surface emitting lasers (spin-VCSELs).
Keywords
light polarisation; light sources; semiconductor lasers; surface emitting lasers; enhanced emission intensity; optical communication; orthogonal polarization states; quantum dot spin vertical cavity surface emitting lasers; quantum well; reconfigurable optical interconnects; reduced threshold current; secure communication; semiconductor lasers; spin polarized lasers; Communication switching; Laser stability; Optical control; Optical polarization; Optical switches; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354912
Filename
5354912
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