Title :
HfO2 gated, self aligned and directly contacted indium arsenide quantum-well transistors for logic applications — A temperature and bias dependent study
Author :
Ali, A. ; Mookerjea, S. ; Hwang, E. ; Koveshnikov, S. ; Oktyabrsky, S. ; Tokranov, V. ; Yakimov, M. ; Kambhampati, R. ; Tsai, W. ; Datta, S.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
The authors have demonstrated an insulated gate quantum-well transistor architecture using InGaAs/InAs quantum well with an HfO2/TaN gate stack and self aligned ohmic contacts directly contacting the quantum-well. Temperature dependent measurements indicate a high mobility limited by phonon scattering is achievable under moderate to high gate field making it another promising device architecture for future VLSI logic applications.
Keywords :
III-V semiconductors; VLSI; field effect logic circuits; field effect transistors; hafnium compounds; indium compounds; ohmic contacts; quantum well devices; semiconductor device metallisation; tantalum compounds; HfO2-TaN; InGaAs-InAs; VLSI logic; directly contacted quantum well transistor; insulated gate quantum well transistor; logic application; self aligned ohmic contact; Hafnium oxide; Indium gallium arsenide; Insulation; Ohmic contacts; Particle scattering; Phonons; Quantum well devices; Quantum wells; Temperature dependence; Temperature measurement;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354916
