DocumentCode
2693035
Title
New universal physical model for the recoverable part of NBTI degradation
Author
Zhang, Xiao ; Deal, Michael ; Nishi, Yoshio
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
255
Lastpage
256
Abstract
In this study, we propose a new universal electron trapping/detrapping model of interface traps for the recoverable part of negative bias temperature instability (NBTI) using dispersive relaxation time. In particular, our model can separate different phases of NBTI process by different slopes of logarithmic time dependence for the first time. We have also successfully derived a normalized universal relaxation relation of this part of NBTI.
Keywords
carrier relaxation time; electron traps; interface states; NBTI degradation; dispersive relaxation time; electron trapping-detrapping model; interface traps; logarithmic time dependence; negative bias temperature instability; Degradation; Dispersion; Electron traps; Energy states; Function approximation; Niobium compounds; Phase measurement; Stress measurement; Thermal stresses; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354919
Filename
5354919
Link To Document