• DocumentCode
    2693035
  • Title

    New universal physical model for the recoverable part of NBTI degradation

  • Author

    Zhang, Xiao ; Deal, Michael ; Nishi, Yoshio

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    255
  • Lastpage
    256
  • Abstract
    In this study, we propose a new universal electron trapping/detrapping model of interface traps for the recoverable part of negative bias temperature instability (NBTI) using dispersive relaxation time. In particular, our model can separate different phases of NBTI process by different slopes of logarithmic time dependence for the first time. We have also successfully derived a normalized universal relaxation relation of this part of NBTI.
  • Keywords
    carrier relaxation time; electron traps; interface states; NBTI degradation; dispersive relaxation time; electron trapping-detrapping model; interface traps; logarithmic time dependence; negative bias temperature instability; Degradation; Dispersion; Electron traps; Energy states; Function approximation; Niobium compounds; Phase measurement; Stress measurement; Thermal stresses; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354919
  • Filename
    5354919