Title :
VLS-grown silicon nanowire tunnel FET
Author :
Moselund, K.E. ; Ghoneim, H. ; Björk, M.T. ; Schmid, H. ; Karg, S. ; Lörtscher, E. ; Riess, W. ; Riel, H.
Author_Institution :
IBM Res. GmbH, Zurich Res. Lab., Ruschlikon, Switzerland
Abstract :
In the present work we demonstrate the successful implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (Si NWs) that were grown using the vapor-liquid-solid (VLS) growth method. Device optimization resulted in increased band-to-band tunneling with an on-current of 0.5 ¿A/¿m, and Ion/Ioff ratio of about 6 decades combined with an inverse subthreshold slope (SS) of around 100 mV/dec over several decades of current and even sub-60 mV/dec for the lowest currents.
Keywords :
elemental semiconductors; field effect transistors; nanowires; silicon; tunnel transistors; Si; band-to-band tunneling; inverse subthreshold slope; nanowire tunnel FET; tunneling field-effect transistors; vapor-liquid-solid growth method; Diodes; Doping; FETs; Geometry; Laboratories; MOSFET circuits; Silicon; Temperature; Tunneling; Voltage;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354920
