1.9 nm wide ultra-high aspect-ratio bulk-Si FinFETs

This work focuses on FinFETs with high aspect-ratio and thus a wide MOSFET channels in each fin, which translates into higher device density per chip area and more efficient use of the silicon real-estate. Moreover, in analog applications where multi-fin devices are required for wider transistors, a small number of taller fins is preferable to a large number of shorter fins in terms of gate resistance and gate capacitance which improves high-frequency performance. The fabrication process is designed to keep the fin-width in the 10 nm range while at the same time tall fins are etched.