DocumentCode
2693097
Title
Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs
Author
Solomon, P.M. ; Laux, S.E. ; Shi, L. ; Cai, J. ; Haensch, W.
Author_Institution
IBM, T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
263
Lastpage
264
Abstract
In this work we provide a compelling experimental and theoretical explanation for the low GIDL currents that occur due to band to band (b2b) tunneling in MOSFETs with [100] (45° rotated) channel direction compared to [110] oriented devices. In measurements on bulk Si wafers, we clearly show a factor of ~3× decrease in tunneling current for (001) wafers compared to (011) or (111) wafers supporting the GIDL observations. Rigorous calculations of complex band structure for the three directions reveal that the light hole band dominates the tunneling action integral, supporting our measurements and accounting for the GIDL data.
Keywords
MOSFET; elemental semiconductors; silicon; GIDL data; Si; orientation dependence gate-induced drain leakage; scaled MOSFET; tunneling action integral; Charge carrier processes; Current measurement; Diodes; Doping profiles; Electrical resistance measurement; FETs; MOSFETs; Silicon; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354924
Filename
5354924
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