Reduction of self-heating effect in silicon MOSFETs on directly bonded Si-on-SiC wafer with high heat conductance

In this study, a remarkable improvement in heat-dissipation performance due to the high thermal conductivity of SiC was demonstrated for Si MOSFETs fabricated on directly bonded Si-on-SiC wafers. Si devices on Si-on-SiC wafers are expected to operate at higher power densities or in higher temperature atmospheres than conventional Si devices. When used with semi-insulating SiC, the proposed Si-on-SiC is applicable to conventional silicon-on-insulator (SOI) structures for reducing the parasitic capacitance of the wafer, which results in the possibility of extremely high operating frequencies with low power loss.