Title :
Potential and challenges of InN and related alloys for advanced electronic devices
Author :
Nanishi, Yasushi ; Maeda, Narihiko ; Yamaguchi, Tomohiro ; Kaneko, Makoto
Author_Institution :
Ritsumeikan Univ., Kusatsu, Japan
Abstract :
In this talk, we will introduce newly developed RF-MBE growth method which made it possible to grow high-quality InN very reproducibly. Then, the results on studies on ohmic and MIS c ontacts to InN will be shown. InN re-growth technology applied to AlGaN/GaN HFET will also be introduced and show possibility to make new type of fun ctional device using large band offset between InN and other nitride semiconductor system.
Keywords :
indium compounds; semiconductor growth; semiconductor materials; InN; RF-MBE growth method; advanced electronic devices; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354927
