Title :
High voltage lateral 4H-SiC JFETs on a semi-insulating substrate
Author :
Huang, Chih-Fang ; Kan, Cheng-Li ; Wu, Tian-Li ; Lee, Meng-Chia ; Liu, Yo-Zthu ; Lee, Kung-Yen ; Zhao, Feng
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Because of the superior material properties, silicon carbide (SiC) devices have drawn considerable attention in high power and high temperature applications. Promising performance has been demonstrated on both vertical and lateral devices. In this paper, we report the performance of high voltage lateral 4H-SiC JFETs built on a semiinsulating substrate. The drift region design is based on charge compensation of the n- and p-type materials.
Keywords :
junction gate field effect transistors; substrates; high power application; high temperature application; high voltage lateral 4H-SiC JFET; n-type materials; p-type materials; semiinsulating substrate; silicon carbide devices; Aluminum; Doping; Implants; Insulation; JFETs; Material properties; Nitrogen; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354929
