Title :
Laser operation of the III/V compound material Ga(NAsP) grown lattice matched on (001) Si substrate
Author :
Kunert, B. ; Liebich, S. ; Zinnkann, S. ; Nemeth, I. ; Fritz, R. ; Volz, K. ; Stolz, W. ; Lange, C. ; Koester, N.S. ; Franzbach, D.J. ; Chatterjee, S. ; Rühle, W.W. ; Gerhardt, N.C. ; Koukourakis, N. ; Hofmann, M.
Author_Institution :
NAsP III/V GmbH, Marburg, Germany
Abstract :
Nowadays silicon photonics gains more and more interest especially for the future architecture of Si based optoelectronic integrated circuits (OEI C). OEIC building blocks such a s modulators, detectors as well as light wave guides have been demonstrated in a down-scalable process technology. However, a commercial solution for the monolithic integration of long-term stable laser diodes has not been achieved yet, which is, however, the key device component to full y profit from silicon photonics.
Keywords :
III-V semiconductors; MOCVD coatings; gallium compounds; integrated optoelectronics; semiconductor lasers; silicon; vapour phase epitaxial growth; Ga(NAsP); III-V compound material laser operation; Si; lattice matched growth; monolithic integration; optoelectronic integrated circuits; silicon photonics; stable laser diode; Laser theory; Lattices; Materials science and technology; Optical materials; Photonics; Physics; Submillimeter wave technology;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354936
