Title :
Flexible plastic substrate ZnO thin film transistor circuits
Author :
Zhao, Dalong A. ; Mourey, Devin A. ; Jackson, Thomas N.
Author_Institution :
Center for Thin Film Devices & Mater. Res. Inst., PA, USA
Abstract :
Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400¿C on GaAs substrates have demonstrated mobility over 100 cm2/V-s, and five-stage ring oscillators based on 0.5 ¿m gate length indium gallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators.
Keywords :
gallium compounds; indium compounds; oscillators; pulsed laser deposition; thin film transistors; zinc compounds; GaAs; InGaZnO; ZnO; amorphous silicon TFT; bootstrapped ring oscillators; five-stage ring oscillators; flexible plastic substrate thin film transistor circuits; propagation delay; pulsed laser deposition; size 0.5 mum; temperature 400 degC; Amorphous silicon; Circuit stability; Displays; Flexible printed circuits; Plastics; Pulsed laser deposition; Ring oscillators; Substrates; Thin film transistors; Zinc oxide;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354938
