Optimum low-gate-field and high-gate-field stability of amorphous silicon thin-film transistors with a single plastic-compatible gate nitride deposition process

In this abstract, we demonstrate a single gate nitride deposition process (using standard PECVD growth) which is optimum for stability for both low-field driving and high-field switching applications. Furthermore, the nitride deposition temperature is limited to 300°C which is compatible with high temperature clear plastic substrates, unlike the previous best low-field results which required 350°C.