Title :
Top-gate ZnO nanowire transistors with ultrathin organic gate dielectric
Author :
Kälblein, D. ; Böttcher, H.J. ; Weitz, R.T. ; Zschieschang, U. ; Kern, K. ; Klauk, H.
Author_Institution :
Planck Inst. for Solid State Res., Stuttgart, Germany
Abstract :
To take full advantage of the small size and excellent charge transport properties of inorganic nanowires, we have prepared FETs and integrated circuits based on individual single-crystalline ZnO nanowires with patterned, metallic top gate electrodes and a thin, solution-processed gate dielectric.
Keywords :
II-VI semiconductors; nanowires; semiconductor quantum wires; zinc compounds; ZnO; metallic top gate electrodes; solution-processed gate dielectric; top-gate nanowire transistors; ultrathin organic gate dielectric; Dielectrics; Zinc oxide;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354946
