Title :
Optimization of InGaAs/InP p-i-n photodiode for dual axis position detection systems
Author :
Budianu, Elena ; Purica, Munizer ; Rusu, Emil
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
The authors present the optimization of a quadrant p-i-n photodiode structure on a InGaAs/InP heterostructure suited for infrared laser telemetry and optical centering applications. Taking into account the influence of material characteristics, mid structure parameters of the photoresponse were designed. The authors fabricated a quadrant photodiode characterized by a responsivity of 0.62 A/W for each photodetector element, a good photoresponse uniformity on active area with deviations less than 1 percent and a good position resolution obtained by minimizing the crosstalk between elements
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical crosstalk; p-i-n photodiodes; photodetectors; position measurement; InGaAs-InP; InGaAs/InP heterostructure; InGaAs/InP p-i-n photodiode; crosstalk; dual axis position detection systems; infrared laser telemetry; optical centering; optimization; photoresponse; photoresponse uniformity; position resolution; quadrant p-i-n photodiode structure; quadrant photodiode; responsivity; Absorption; Doping; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical crosstalk; PIN photodiodes; Photodetectors; Telemetry; Voltage;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.889115
