Title :
New approach to calculation the transit time in fast silicon photodiodes operating at low-voltage bias
Author :
Malik, Alcxander ; Aceves, Mariano
Author_Institution :
Dept. de Electron., Inst. Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
Abstract :
In this paper, a new approach is presented for the transit time calculations in fast silicon planar photodiodes operating at low-voltage bias. It is shown that at a given voltage bias the transit time has a minimal value at certain carrier concentrations in the high-resistive layer. Results presented are useful for correct design optimization of the device
Keywords :
carrier density; elemental semiconductors; optimisation; photodiodes; semiconductor device models; silicon; transit time devices; Si; carrier concentration; design optimization; fast silicon photodiodes; fast silicon planar photodiodes; high-resistive layer; low-voltage bias; transit time; Absorption; Bismuth; Charge carrier processes; Electron mobility; Erbium; Photodetectors; Photodiodes; Silicon; Spraying; Voltage;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.889116
