DocumentCode
2693564
Title
New approach to calculation the transit time in fast silicon photodiodes operating at low-voltage bias
Author
Malik, Alcxander ; Aceves, Mariano
Author_Institution
Dept. de Electron., Inst. Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
Volume
2
fYear
2000
fDate
2000
Firstpage
385
Abstract
In this paper, a new approach is presented for the transit time calculations in fast silicon planar photodiodes operating at low-voltage bias. It is shown that at a given voltage bias the transit time has a minimal value at certain carrier concentrations in the high-resistive layer. Results presented are useful for correct design optimization of the device
Keywords
carrier density; elemental semiconductors; optimisation; photodiodes; semiconductor device models; silicon; transit time devices; Si; carrier concentration; design optimization; fast silicon photodiodes; fast silicon planar photodiodes; high-resistive layer; low-voltage bias; transit time; Absorption; Bismuth; Charge carrier processes; Electron mobility; Erbium; Photodetectors; Photodiodes; Silicon; Spraying; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.889116
Filename
889116
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