Title :
Seamless on-wafer integration of GaN HEMTs and Si(100) MOSFETs
Author :
Chung, J.W. ; Lee, J. ; Piner, E.L. ; Palacios, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed basis to realize key functions on VLSI chips that are difficult to implement in Si technology. In this paper, we demonstrate the first on-wafer integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; VLSI; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; AlGaN-GaN; CMOS technologies; HEMT; III-V compound semiconductors; MOSFET; Si; VLSI chips; compound semiconductor electronics; low-cost heterogeneous integration technology; mixed-signal performance; seamless on-wafer integration; Aluminum gallium nitride; CMOS technology; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; MOSFETs; Robustness; Silicon; Very large scale integration;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354963
