Title :
Sb-based n- and p-channel HFETs for high-speed, low-power applications
Author :
Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Ancona, M.G. ; Champlain, J.G. ; Park, D. ; Kruppa, W. ; Weaver, B.D. ; Bass, R. ; Shanabrook, B.V.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential, which include large-scale activearray space-based radar, communications, imaging, sensing, and high-data-rate transmission. In this talk, recent advances at our laboratory in the design, material growth, device performance, and oxidation stability of Sb-based nand p-channel HFETs will be presented.
Keywords :
antimony; high electron mobility transistors; Sb; Sb-based n-channel HFET; Sb-based p-channel HFET; antimonide-based compound semiconductor materials; attractive electron; heterostructure field-effect transistors; high-speed low-power applications; hole transport properties; unique band-lineup design flexibility; Charge carrier processes; HEMTs; Large-scale systems; MODFETs; Ohmic contacts; Photonic band gap; Radar applications; Radar imaging; Semiconductor materials; Spaceborne radar;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354965
