• DocumentCode
    2693760
  • Title

    Structural and functional properties of SnO2 sol-gel derived thin films for integrated gas sensors

  • Author

    Cobianu, Cornel ; Savaniu, Cristian ; Siciliano, Pietro ; Capone, Simnonetta ; Utriainen, M. ; Niinisto, Lauri

  • Author_Institution
    Inst. of Microtechnol., Bucharest, Romania
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    441
  • Abstract
    We present the structural and gas sensing properties of the sol-gel derived SnO2 thin films exposed to small concentrations of reducing and oxidant ambient. XRD investigations show the structural evolution of the film as a function of sol-gel processing parameters. Nanometric grain size relation to metal atom doping has been obtained. For the functional characterisation of our SnO2 sensing films, we propose an integrated technology for a simple test microstructure, based on resistive heater made of boron doped silicon and W/Au metallization for both sensor electrodes and heater contact. AFM investigations of SnO2 thin films revealed the morphology of the films used for gas sensing applications. A test structure having medium electrical power consumption (below 900 mW) was used for the detection of the controlled concentrations of CH4, CH3 COOH, and NO2 at low temperatures
  • Keywords
    X-ray diffraction; atomic force microscopy; gas sensors; grain size; liquid phase deposited coatings; nanostructured materials; semiconductor growth; semiconductor thin films; sol-gel processing; tin compounds; AFM; NO2; SnO2; W/Au metallization; XRD; functional properties; gas sensing properties; integrated gas sensors; low temperatures; morphology; nanometric grain size; nanostructured sensing layers; oxidant ambient; processing parameters dependence; reducing ambient; resistive heater; sol-gel derived thin films; structural properties; Boron; Doping; Gold; Grain size; Microstructure; Semiconductor films; Silicon; Testing; Transistors; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.889127
  • Filename
    889127