Title :
High current operation of enhancement-mode GaN MIS-HEMTs with triple cap structure using atomic layer deposited Al2O3 gate insulator
Author :
Kanamura, M. ; Ohki, T. ; Kikkawa, T. ; Imanishi, K. ; Imada, T. ; Hara, N.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
In summary, we dem onstrated AlGaN/GaN enhancement-mode MIS-HEMTs that exhibited a high maximum drain current of 860 mA/mm and high off-state breakdown voltage of 320 V with threshold voltage of 3 V by introducing a piezoelectric-induced cap and a recessed ALD-MIS-gate structure. This is the highest Lja¿with the breakdown voltage of over 300 V for enhancement -mode HEMTs. The 1 mm gate width device showed the output power of 4.8 W/mm and high drain efficiency of 61% at the Vgs= 3.8 V. These results suggest that the recessed AlGaN/GaN MIS-HEMT with the triple layer cap could be a promising technique for the Enhancement-mode transistors with a high breakdown voltage.
Keywords :
III-V semiconductors; MIS devices; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; semiconductor device breakdown; wide band gap semiconductors; ALD-MIS-gate structure; Al2O3; AlGaN-GaN; GaN; MIS-HEMT; atomic layer deposited gate insulator; breakdown voltage; enhancement-mode transistors; high current operation; high electron mobility transistors; metal-insulator-semiconductor; size 1 mm; triple cap structure; voltage 3 V; voltage 3.8 V; voltage 320 V; Aluminum oxide; Atomic layer deposition; Gallium nitride; Insulation;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354967
