• DocumentCode
    2693787
  • Title

    Preparation and ferroelectric properties of graded Pb(TixZr1-x)O3 thin films

  • Author

    Boerasu, Lulian ; Pintilie, Luciau ; Matei, I. ; Pintilie, I.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Magurele, Romania
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    445
  • Abstract
    Pb(ZrxTi1-x)O3 (x=0÷0.8) graded thin films were fabricated by sol-gel method on Pt/SiO2/Si substrates using metal alkoxide solution. The samples were crystallized by conventional thermal annealing in air for 30 min. at 700°C. The ferroelectric properties of the graded structure were investigated. Specific unusual behavior in the ferroelectric loops like large offset on the polarization axis was observed and discussed
  • Keywords
    annealing; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; functionally graded materials; lead compounds; multilayers; scanning electron microscopy; sol-gel processing; 30 min; 700 C; PZT; PbZrO3TiO3; Pt/SiO2/Si substrates; SEM; anomalous hysteresis loops; coercive field; compositional gradient; ferroelectric loops; ferroelectric properties; graded thin films; large offset; metal alkoxide solution; multilayer structures; perovskite structure; polarization axis; sol-gel preparation; thermal annealing; Annealing; Electrodes; Ferroelectric films; Ferroelectric materials; Nonhomogeneous media; Platinum; Pyroelectricity; Semiconductor thin films; Transistors; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.889128
  • Filename
    889128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693787