Title :
Preparation and ferroelectric properties of graded Pb(TixZr1-x)O3 thin films
Author :
Boerasu, Lulian ; Pintilie, Luciau ; Matei, I. ; Pintilie, I.
Author_Institution :
Nat. Inst. of Mater. Phys., Magurele, Romania
Abstract :
Pb(ZrxTi1-x)O3 (x=0÷0.8) graded thin films were fabricated by sol-gel method on Pt/SiO2/Si substrates using metal alkoxide solution. The samples were crystallized by conventional thermal annealing in air for 30 min. at 700°C. The ferroelectric properties of the graded structure were investigated. Specific unusual behavior in the ferroelectric loops like large offset on the polarization axis was observed and discussed
Keywords :
annealing; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; functionally graded materials; lead compounds; multilayers; scanning electron microscopy; sol-gel processing; 30 min; 700 C; PZT; PbZrO3TiO3; Pt/SiO2/Si substrates; SEM; anomalous hysteresis loops; coercive field; compositional gradient; ferroelectric loops; ferroelectric properties; graded thin films; large offset; metal alkoxide solution; multilayer structures; perovskite structure; polarization axis; sol-gel preparation; thermal annealing; Annealing; Electrodes; Ferroelectric films; Ferroelectric materials; Nonhomogeneous media; Platinum; Pyroelectricity; Semiconductor thin films; Transistors; Zirconium;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.889128
