DocumentCode :
2693863
Title :
A Comparative Study of TEGFET and MESFET Large Signal Character and Saturation Mechanisms
Author :
Weiss, M. ; Pavlidis, D.
Volume :
2
fYear :
1987
fDate :
May 9 1975-June 11 1987
Firstpage :
553
Lastpage :
556
Abstract :
A new method for large-signal transistor analysis is presented and applied to TEGFETs and MESFETS. Saturation mechanisms of both types of transistors are described and operation differences are discussed. The importance and influence of higher harmonic signal components on the large signal characteristics is also shown.
Keywords :
Forward contracts; Frequency; HEMTs; Length measurement; MESFETs; MODFETs; Power generation; Power measurement; Power system harmonics; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1987.1132469
Filename :
1132469
Link To Document :
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