Title :
Residual stress analysis in thin membranes obtained by boron diffusion processes
Author :
Manea, Elena ; Cernica, Ileana ; Dolocan, Voicu ; Muller, Raluca
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
In this paper we analyze the stress induced in thin membranes (5-10 μm), obtained by wet etching after thermal diffusion from boron solid source. Using a new solution we reveal defects and analyze the chemical mechanism and the causes of their appearance. We proved that the residual stress could be changed, from tensile to compressive modeling post diffusion processes. Finally, we correlate the kind of defects with the stress effect
Keywords :
boron; elemental semiconductors; internal stresses; membranes; semiconductor doping; silicon; stress analysis; surface diffusion; B diffusion; Si:B; chemical mechanism; residual stress analysis; thin membranes; wet etching; Biomembranes; Boron; Chemical analysis; Compressive stress; Diffusion processes; Residual stresses; Solids; Tensile stress; Thermal stresses; Wet etching;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.889134
