Title :
A GaAs Microwave MESFET with Extremely Low Distortion
Author :
Guo-Gang Zhou ; Curtis, T. ; Chen, R.
fDate :
May 9 1975-June 11 1987
Abstract :
A ku-band GaAs power FET with extremely low signal distortion was fabricated on a material with graded doping profile, grown by a special vapor phase epitaxy technique. The device has a nearly constant gm over a wide range of the bias. At P/sub o/ = 18 dBm and P/sub sat/ = 24 dBm power levels of a 6 to 18 GHz broad band amplifier, this device demonstrates second harmonic levels as low as 40 dBc and 22 dBc , respectively, which is the lowest ever reported.
Keywords :
Distortion; Doping profiles; Fabrication; Gallium arsenide; Linearity; MESFETs; Microwave devices; Noise figure; Ohmic contacts; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132473
