Title :
The Deformable-Channel Model-A New Approach to High-Frequency MESFET Modelling
Author :
Crowne, F. ; Eskandarian, A. ; Sequeira, H.B. ; Jahkete, R.
fDate :
May 9 1975-June 11 1987
Abstract :
High-frequency small-signal circuit parameters are evaluated for a saturated-channel MESFET by including transit-time effects in a rigorous way through a study of induced shape changes in the saturated-channel region. Results agree well with empirical equivalent-circuit parameters for a physical MESFET.
Keywords :
Anisotropic magnetoresistance; Deformable models; Equations; Equivalent circuits; Frequency; Impedance; Laboratories; MESFET circuits; Shape; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132474
