Title :
Microwave Resistance of Gallium Arsenide and Silicon P-I-N Diodes
Author :
Caverly, R.H. ; Hiller, G.
fDate :
May 9 1975-June 11 1987
Abstract :
The purpose of this paper is to demonstrate that the p-i-n diode resistance is definable as a function of frequency and depends on the diode geometry and electronic properties. A formula for the p-i-n diode resistance is presented and compared with experimental resistance versus frequency data for both silicon and gallium arsenide p-i-n diodes.
Keywords :
Charge carrier lifetime; Electric resistance; Equations; Gallium arsenide; Geometry; P-i-n diodes; Radio frequency; Semiconductor diodes; Silicon; Testing;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132479
