DocumentCode
2694060
Title
A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave Application
Author
Bishop, W.L. ; McKinney, K. ; Mattauch, R.J. ; Crowe, T.W. ; Green, G.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
607
Lastpage
610
Abstract
A novel whiskerless Schottky diode has been developed in which shunt capacitance is minimized by means of an etched surface channel. This structure is easily fabricated and the DC I-V characteristics areas good as those of the best available whisker-contacted devices. Preliminary RF characterization in an unoptimized mount at 110 GHz has yielded room temperature SSB mixer noise temperature of 950 K and SSB conversion loss of 6.4 dB. The diode is robust and can be operated at cryogenic temperatures. Potential applications include waveguide and planar mixers, planar arrays, multipliers, varactor tuners, and microwave integrated circuits.
Keywords
Amplitude modulation; Capacitance; Etching; Integrated circuit noise; Integrated circuit yield; Millimeter wave devices; Radio frequency; Schottky diodes; Submillimeter wave devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132483
Filename
1132483
Link To Document