Title :
Temperature effect on photoluminescence excitation process of porous silicon
Author :
Korsunskaya, N.E. ; Torchinskaya, T.V. ; Dzhumaev, R.R. ; Khomenkova, I.Yu. ; Bulakh, B.M. ; Many, A. ; Goldstein, Y. ; Savir, E.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intensity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling
Keywords :
elemental semiconductors; photoexcitation; photoluminescence; porous semiconductors; silicon; Si; adsorbent center; energy transfer; luminescence center; photoluminescence excitation spectra; photoluminescence spectra; porous silicon; temperature transformation; Absorption; Aging; Cooling; Crystallization; Energy exchange; Luminescence; Photoluminescence; Physics; Silicon; Temperature;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.889144
