DocumentCode
2694064
Title
Temperature effect on photoluminescence excitation process of porous silicon
Author
Korsunskaya, N.E. ; Torchinskaya, T.V. ; Dzhumaev, R.R. ; Khomenkova, I.Yu. ; Bulakh, B.M. ; Many, A. ; Goldstein, Y. ; Savir, E.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Volume
2
fYear
2000
fDate
2000
Firstpage
511
Abstract
It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intensity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling
Keywords
elemental semiconductors; photoexcitation; photoluminescence; porous semiconductors; silicon; Si; adsorbent center; energy transfer; luminescence center; photoluminescence excitation spectra; photoluminescence spectra; porous silicon; temperature transformation; Absorption; Aging; Cooling; Crystallization; Energy exchange; Luminescence; Photoluminescence; Physics; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.889144
Filename
889144
Link To Document