Title :
Investigation on optical and electrical properties of LPCVD SiOxNy thin films
Author :
Modreanu, M. ; Gartner, Mariuca ; Szekeres, A. ; Alexandrova, S.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at temperature range of 820-880°C and 400 mTorr, using mixture of SiCl2H2-NH3N 2O. The investigation on optical and electrical properties was made using spectroellipsometry (SE) and the analyses of 1 MHz capacitance-voltage characteristics. To calculate optical and microstructural parameters of the films we used different approaches (Bruggeman-EMA, Cauchy, Sellmeier and Wemple-Di Domenico). The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of their generation
Keywords :
CVD coatings; ellipsometry; insulating thin films; interface states; silicon compounds; 1 MHz; 400 mtorr; 820 to 880 C; SiON-Si; amorphous silicon oxynitride thin film; capacitance-voltage characteristics; electrical properties; interface trap density; low pressure chemical vapour deposition; microstructural parameters; optical properties; spectroellipsometry; Capacitance-voltage characteristics; Fluid flow; Optical films; Optical refraction; Optical variables control; Refractive index; Semiconductor films; Semiconductor thin films; Silicon; Temperature;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.889145
