Title :
Operating Characteristics of 2-8 GHz GaAs MESFET Amplifiers at Elevated Case Temperatures to 200 Degrees Centigrade
Author :
Crescenzi, E.J. ; Thompson, J.A. ; Kritzer, T.R. ; Kretschmar, M.E.
fDate :
May 9 1975-June 11 1987
Abstract :
RF performance of 2-8 GHz amplifiers utilizing GaAs MESFETs which incorporate TiWN diffusion barriers is reported for a case temperature range of -54 to +200°C. Preliminary results of in-process accelerated life tests are also included.
Keywords :
Gallium arsenide; Gold; MESFETs; Microwave integrated circuits; Operational amplifiers; Radio frequency; Radiofrequency amplifiers; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132546
