Title :
A 6 Watt Power GaAs FET for 14.0-14.5GHz Band
Author :
Kadowaki, Y. ; Igi, S. ; Wataze, M. ; Sonoda, T. ; Hayashi, K. ; Yamanouchi, M. ; Takamiya, S. ; Mitsui, S.
fDate :
May 9 1975-June 11 1987
Abstract :
An internally matched GaAs FET with output power above 38dBm(6.3W) and linear power gain above 5.8dB has been developed for the 14.0-14.5GHz band. These results were achieved by using high quality GaAs wafers prepared by molecular beam epitaxy (MBE) and optimizing the channel recess structure. Additionally, the package size of the FET was successfully reduced by using a high dielectric substrate for the internal matching circuits of both input and output .
Keywords :
Circuits; Dielectric substrates; FETs; Gallium arsenide; High-K gate dielectrics; Impedance; Molecular beam epitaxial growth; Packaging; Power generation; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132548
