Title :
A GaAs MESFET Balanced Mixer with Very Low Intermodulation
fDate :
May 9 1975-June 11 1987
Abstract :
A new type of balanced resistive mixer has been realized by using the unbiased channel of a GaAs MESFET as the mixing element. Because this resistance is only very weakly nonlinear, very low intermodulation results. State-of-the-art second-and third-order output intercept points of 34 and 21 dBm are achieved, with 7 dB conversion loss at X band.
Keywords :
Equivalent circuits; Filters; Gallium arsenide; Impedance; MESFET circuits; Microwave devices; Radio frequency; Resistors; Schottky diodes; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132562
