DocumentCode
2695087
Title
A GaAs MESFET Balanced Mixer with Very Low Intermodulation
Author
Maas, S.A.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
895
Lastpage
898
Abstract
A new type of balanced resistive mixer has been realized by using the unbiased channel of a GaAs MESFET as the mixing element. Because this resistance is only very weakly nonlinear, very low intermodulation results. State-of-the-art second-and third-order output intercept points of 34 and 21 dBm are achieved, with 7 dB conversion loss at X band.
Keywords
Equivalent circuits; Filters; Gallium arsenide; Impedance; MESFET circuits; Microwave devices; Radio frequency; Resistors; Schottky diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132562
Filename
1132562
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