• DocumentCode
    2695125
  • Title

    Passive GaAs FET Switch Models and Their Application in Phase Shifters

  • Author

    Upadhyayula, L.C. ; Taylor, Gareth ; Subbarao, S.N. ; Liu, S.G.

  • Volume
    2
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    903
  • Lastpage
    906
  • Abstract
    A new device model is proposed for the zero bias (V/sub gs/ = 0) and pinch off (V/sub gs/ -V/sub p/) states for GaAs MESFETs operated in a passive mode (I/sub ds/ = 0). The agreement between measurements and predicted S-parameter data is better than 90% which is 40-50% improvement over previously published models. The FET switch model will be discussed. The fabrication and performance of 12 GHz MMIC phase shifters designed using this new model will be described.
  • Keywords
    Capacitance; Equivalent circuits; FETs; Fabrication; Gallium arsenide; Impedance; Phase shifters; Scattering parameters; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132564
  • Filename
    1132564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2695125