Title :
Passive GaAs FET Switch Models and Their Application in Phase Shifters
Author :
Upadhyayula, L.C. ; Taylor, Gareth ; Subbarao, S.N. ; Liu, S.G.
fDate :
May 9 1975-June 11 1987
Abstract :
A new device model is proposed for the zero bias (V/sub gs/ = 0) and pinch off (V/sub gs/ -V/sub p/) states for GaAs MESFETs operated in a passive mode (I/sub ds/ = 0). The agreement between measurements and predicted S-parameter data is better than 90% which is 40-50% improvement over previously published models. The FET switch model will be discussed. The fabrication and performance of 12 GHz MMIC phase shifters designed using this new model will be described.
Keywords :
Capacitance; Equivalent circuits; FETs; Fabrication; Gallium arsenide; Impedance; Phase shifters; Scattering parameters; Switches; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132564
